The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Sep. 21, 2021
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventor:
Chia-Jung Hsu, Taipei, TW;
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C09K 13/08 (2006.01); C11D 7/08 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C09K 13/08 (2013.01); C11D 7/08 (2013.01); H01L 21/31144 (2013.01); C11D 2111/22 (2024.01);
Abstract
Provided are compositions and methods for selectively etching hard mask layers and/or photoresist etch residues relative to low-k dielectric layers that are present. More specifically, the present invention relates to a composition and process for selectively etching titanium nitride and/or photoresist etch residues relative to low-k dielectric layers. Other materials that may be present on the microelectronic device should not be substantially removed or corroded by said compositions.