The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Sep. 22, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jing-Hong Huang, Hsinchu, TW;

Wei-Han Lai, Hsinchu, TW;

Ching-Yu Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/3213 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); H01L 21/32139 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01);
Abstract

A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.


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