The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jun. 28, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Sheng-Kai Su, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
A method includes forming a semiconductor fin protruding above a substrate; forming a first 2D material layer across the semiconductor fin; depositing a gate material layer over the first 2D material layer; etching the gate material layer and the first 2D material layer to form a gate structure and a patterned first 2D material layer under the gate structure; laterally growing a second 2D material layer from the patterned first 2D material layer to beyond the gate structure; after laterally growing the second 2D material layer, forming gate spacers respectively on opposite sidewalls of the gate structure; and after forming the gate spacers, forming a third 2D material layer on the second 2D material layer until a combination of the third 2D material layer and the second 2D material layer comprises at least three or more monolayers of PtSe.