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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12068372 B1

PDFFull Text
Date of Patent:
Aug. 20, 2024

Filed:

Mar. 06, 2023

Semiconductor device structure integrating air gaps and methods of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Ching Wang, Kinmen, TW;

Kuan-Lun Cheng, Hsinchu, TW;

Wen-Hsing Hsieh, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

NZ CARR LAW OFFICE

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/76846 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 29/0653 (2013.01); H01L 29/41791 (2013.01); H01L 29/4236 (2013.01); H01L 2924/13067 (2013.01);
Abstract

A semiconductor device structure, along with methods of forming such, are described. In one embodiment, a semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side opposing the front side, a gate stack disposed on the front side of the substrate, and a first source/drain feature and a second source/drain feature disposed in opposing sides of the gate stack. Each first source/drain feature and second source/drain feature comprises a first side and a second side, and a portion of the back side of the substrate is exposed to an air gap.

Find Patent Forward Citations

Wang, Chih-Ching. (2024). Semiconductor device structure integrating air gaps and methods of forming the same (U.S. Patent No. 12068372). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12068372

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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