The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Nov. 29, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tzu-Hsien Yang, Hsinchu, TW;

Hiroki Noguchi, Hsinchu, TW;

Mahmut Sinangil, Campbell, CA (US);

Yih Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2023.01); H01L 25/065 (2023.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 21/76898 (2013.01); H01L 2225/06544 (2013.01);
Abstract

A 3D IC structure includes multiple dies, such as a top die and a bottom die. The top die and/or the bottom die can each include devices such as computing units, Analog-to-Digital converters, analog circuits, RF circuits, logic circuits, sensors, Input/Output devices, and/or memory devices. One or more vertical interconnect structure (VIS) cells are formed adjacent one or more sides of the device. A VIS is formed in some or all of the VIS cells. One or more non-sensitive circuits, such as repeaters, diodes, and/or passive circuits (e.g., resistors, inductors, capacitors, transformers), are disposed in at least one VIS cell.


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