The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Aug. 04, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Nazila Dadvand, Richardson, TX (US);
Christopher Daniel Manack, Flower Mound, TX (US);
Salvatore Frank Pavone, Murphy, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); C23C 14/16 (2006.01); C23C 18/38 (2006.01); C25D 3/38 (2006.01); C25D 3/46 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3736 (2013.01); C23C 14/165 (2013.01); C23C 18/38 (2013.01); C25D 3/38 (2013.01); C25D 3/46 (2013.01); H01L 21/2855 (2013.01); H01L 21/288 (2013.01); H01L 21/76873 (2013.01); H01L 21/78 (2013.01);
Abstract
Described examples include a process that includes forming a diffusion barrier layer on a backside of a semiconductor wafer. The process also includes forming a seed copper layer on the diffusion barrier layer. The process also includes forming a copper layer on the seed copper layer. The process also includes immersion plating a silver layer on the copper layer.