The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jan. 29, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Masahiro Yamazaki, Miyagi, JP;
Shigeru Tahara, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/465 (2006.01); H01L 21/467 (2006.01);
U.S. Cl.
CPC ...
H01L 21/467 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01L 21/02057 (2013.01); H01L 21/32136 (2013.01); H01L 21/465 (2013.01); H01J 37/32238 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method for etching an oxide semiconductor film includes: providing a substrate including a mask of a silicon-containing film on an oxide semiconductor film containing at least indium (In), gallium (Ga), and zinc (Zn); supplying a processing gas containing a bromine (Br)-containing gas or an iodine (I)-containing gas; and etching the oxide semiconductor film by plasma generated from the processing gas.