The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Jul. 22, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Tomer Tzvi Eliash, Sunnyvale, CA (US);

Yu-Chung Lien, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G01R 19/165 (2006.01); G06F 3/06 (2006.01); G06F 11/07 (2006.01); G11C 29/08 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G01R 19/165 (2013.01); G06F 3/064 (2013.01); G06F 3/0673 (2013.01); G06F 11/073 (2013.01); G06F 11/0769 (2013.01); G11C 29/08 (2013.01); G11C 29/50004 (2013.01);
Abstract

Methods, systems, and devices for error detection for programming single level cells of a memory system are described. The memory system may receive a write command for writing data to a block of memory cells and generate a write voltage to write the data to the block of memory cells. The memory system may compare the write voltage to a reference voltage and determine whether the write voltage satisfies a threshold tolerance associated with the reference voltage. The memory system may generate signaling indicating an error associated with writing the data to the block of memory cells, based on determining that the write voltage does not satisfy the threshold tolerance.


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