The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Jan. 31, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Sheng Chang, Hsinchu County, TW;
Chia-En Huang, Hsinchu County, TW;
Wan-Hsueh Cheng, New Taipei, TW;
Yao-Jen Yang, Hsinchu County, TW;
Yih Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes first and second active areas, a first gate, a first conductive segment, a first via and a first continuous gate. The first and second active areas extend in a first direction. The first gate crosses over the first active area and the second active area. The first gate includes a first gate portion and a second gate portion electrically isolated from each other. The first conductive segment crosses over the first active area and the second active area. The first via is arranged above the first conductive segment. The first active area and the second active area are coupled through the first conductive segment to the first via. The first continuous gate is disposed between the first conductive segment and the first gate, and crossing over the first active area and the second active area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile