The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Aug. 23, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Mengmeng Yang, Hefei, CN;
Jie Bai, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/28088 (2013.01); H01L 21/28158 (2013.01); H01L 29/517 (2013.01);
Abstract
In a method for manufacturing a semiconductor structure, a substrate is provided; a stack layer is formed on the substrate, the stack layer including an interfacial layer, a high-k dielectric layer and a work function composite layer which are sequentially stacked; a transition layer is formed on the stack layer; and a metal gate layer is formed on the transition layer. The work function composite layer is prepared by a physical vapor deposition process.
Yang, Mengmeng. (2024). Method for manufacturing semiconductor structure and semiconductor structure (U.S. Patent No. 12062702). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12062702
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile