The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Jun. 28, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;

Inventors:

Yu-Hsuan Huang, Taichung, TW;

Chien-Liang Chen, Hsinchu, TW;

Pei-Hsuan Lee, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/307 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01R 31/307 (2013.01); H01L 22/34 (2013.01);
Abstract

In a semiconductor manufacturing method includes providing a plurality of patterns on a semiconductor substrate. The patterns include an NMOS structure arranged next to an N/N well structure, and/or a PMOS structure arranged next to a P/P well structure. The method further includes: receiving a plurality of images by applying an electron beam to the patterns; and transferring the semiconductor substrate to a next process step if there is no image conversion according to a predetermined image contrast property of the patterns.


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