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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12057485 B1

PDFFull Text
Date of Patent:
Aug. 06, 2024

Filed:

Aug. 23, 2021

Gate-all-around (gaa) method and devices

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shien-Yang Wu, Jhudong Town, TW;

Ta-Chun Lin, Hsinchu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Michele Fan

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/3065 (2013.01); H01L 21/76224 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0673 (2013.01); H01L 29/165 (2013.01); H01L 29/401 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/0274 (2013.01);
Abstract

A method of manufacturing a device includes forming a plurality of stacks of alternating layers on a substrate, constructing a plurality of nanosheets from the plurality of stacks of alternating layers, and forming a plurality of gate dielectrics over the plurality of nanosheets, respectively. The method allows for the modulation of nanosheet width, thickness, spacing, and stack number and can be employed on single substrates. This design flexibility provides for design optimization over a wide tuning range of circuit performance and power usage.

Find Patent Forward Citations

Wu, Shien-Yang. (2024). Gate-all-around (gaa) method and devices (U.S. Patent No. 12057485). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12057485

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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