The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Jan. 13, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Tzu Chen, Taoyuan, TW;

Szu-Ping Tung, Taipei, TW;

Guan-Yao Tu, Hsinchu, TW;

Hsiang-Ku Shen, Hsinchu, TW;

Chen-Chiu Huang, Taichung, TW;

Dian-Hau Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 21/762 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/762 (2013.01); H01L 27/0207 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor device includes a transistor structure disposed over a substrate, a first interlayer dielectric (ILD) layer disposed over the transistor structure, a second ILD layer disposed over the first ILD layer, and a first resistor wire disposed on the second ILD layer, and a second resistor wire disposed on the second ILD layer. A sheet resistance of the first resistor wire is different from a sheet resistance of the second resistor wire.


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