The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Sep. 14, 2021
International Business Machines Corporation, Armonk, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Kenneth Chun Kuen Cheng, Shatin, HK;
Chanro Park, Clifton Park, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A high modulus material layer is formed on a conductive stack. A trench is formed that exposes a surface of the liner and filled with metal. The metal is patterned to form interconnect lines and vias. The high modulus material is removed. A conformal layer is formed on exposed surfaces of the stack and the interconnect lines and vias. A low-κ dielectric is formed on the conformal layer such that the low-κ dielectric is of a height coplanar with the top surface of the vias. The conformal layer is removed from a top surface of the vias. A next level metal layer is formed on the top surface of the vias and low-κ dielectric layer such that added vias of the next level metal layer are directly on the top surface of the vias.