The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

May. 24, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chi-Yu Lu, Hsinchu, TW;

Yi-Hsun Chiu, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Chih-Yu Lai, Hsinchu, TW;

Shang-Hsuan Chiu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/498 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/49827 (2013.01); H01L 23/5286 (2013.01); H01L 29/0649 (2013.01);
Abstract

An integrated circuit (IC) structure includes first and second active areas extending in a first direction in a semiconductor substrate, first and second gate structures extending in a second direction perpendicular to the first direction, wherein each of the first and second gate structures overlies each of the first and second active areas, a first metal-like defined (MD) segment extending in the second direction between the first and second gate structures and overlying each of the first and second active areas, and an isolation structure positioned between the first MD segment and the first active area. The first MD segment is electrically connected to the second active area and electrically isolated from a portion of the first active area between the first and second gate structures.


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