The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Sep. 06, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection in the first IMD layer; removing part of the first IMD layer; forming a spacer adjacent to the first metal interconnection; forming a second IMD layer on the spacer and the first metal interconnection; and forming a second metal interconnection in the second IMD layer and on the spacer and the first metal interconnection.
Quick Actions:
Chang, Ching-Chih. (2024). Semiconductor device including metal interconnections having sidewall spacers thereon, and method for fabricating the same (U.S. Patent No. 12057346). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12057346
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile