The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Sep. 27, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Tuck Foong Koh, Singapore, SG;

John Leonard Sudijono, Singapore, SG;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); C23C 2/02 (2006.01); C23C 14/02 (2006.01); C23C 14/12 (2006.01); C23C 14/54 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32816 (2013.01); C23C 2/024 (2022.08); C23C 14/021 (2013.01); C23C 14/12 (2013.01); C23C 14/541 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01);
Abstract

A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.


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