The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Dec. 19, 2022
Micron Technology, Inc., Boise, ID (US);
Kishore Kumar Muchherla, San Jose, CA (US);
Mustafa N. Kaynak, San Diego, CA (US);
Sivagnanam Parthasarathy, Carlsbad, CA (US);
Xiangang Luo, Fremont, CA (US);
Peter Feeley, Boise, ID (US);
Devin M. Batutis, San Jose, CA (US);
Jiangang Wu, Milpitas, CA (US);
Sampath K. Ratnam, San Jose, CA (US);
Shane Nowell, Boise, ID (US);
Karl D. Schuh, Santa Cruz, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method includes initiating a voltage calibration scan with respect to a block of a memory device, wherein the block is assigned to a first bin associated with a first set of read voltage offsets, and wherein the first bin is designated as a current bin, measuring a value of a data state metric for the block based on a second set of read voltage offsets associated with a second bin having an index value higher than the first bin, determining whether the value is less than a current value of the data state metric measured based on the first set of read voltage offsets, and in response to determining that the value is less than the current value, designating the second bin as the current bin.