The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Oct. 30, 2019
Asml Netherlands B.v., Veldhoven, NL;
Youping Zhang, Cupertino, CA (US);
Boris Menchtchikov, Cupertino, CA (US);
Cyrus Emil Tabery, Redwood City, CA (US);
Yi Zou, Foster City, CA (US);
Chenxi Lin, Newark, CA (US);
Yana Cheng, San Jose, CA (US);
Simon Philip Spencer Hastings, San Jose, CA (US);
Maxime Philippe Frederic Genin, San Mateo, CA (US);
ASML NETHERLANDS B.V., Veldhoven, NL;
Abstract
A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.