The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jun. 18, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 29/04 (2006.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/02667 (2013.01); H01L 21/67109 (2013.01); H01L 29/04 (2013.01); H10B 41/27 (2023.02);
Abstract
Semiconductor fabrication methods and semiconductor devices are disclosed. According to some aspects, a memory device includes a memory stack having interleaved a plurality of conductive layers and a plurality of insulating layers on a substrate, and a channel structure extending vertically in the memory stack. The channel structure includes a semiconductor channel extending vertically in the memory stack and conductively connected to a source structure. The semiconductor channel includes polysilicon, and a grain size of the polysilicon ranges from 100 nm to 600 nm.