The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jul. 06, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Po-Yu Yang, Hsinchu, TW;
Hsun-Wen Wang, Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/0649 (2013.01); H01L 29/66462 (2013.01); H01L 29/6656 (2013.01);
Abstract
A high electron mobility transistor includes an epitaxial stack on a substrate, a gate structure on the epitaxial stack, a passivation layer on the epitaxial stack and covering the gate structure, and an air gap between the passivation layer and the gate structure.
Quick Actions:
Yang, Po-Yu. (2024). High electron mobility transistor and method for forming the same (U.S. Patent No. 12051740). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12051740
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile