The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Dec. 07, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Steven C. H. Hung, Sunnyvale, CA (US);
Mandyam Sriram, San Jose, CA (US);
Jacqueline S. Wrench, San Jose, CA (US);
Yixiong Yang, Fremont, CA (US);
Yong Yang, Boston, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfOas a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.