The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jun. 10, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Daniel Chanemougame, Niskayuna, NY (US);
Lars Liebmann, Mechanicsville, NY (US);
Jeffrey Smith, Clifton Park, NY (US);
Paul Gutwin, Williston, VT (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/473 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01);
Abstract
A microfabrication device is provided. The microfabrication device includes a transistor plane formed on a substrate, the transistor plane including a plurality of field effect transistors; fluidic passages formed within the transistor plane; a dielectric fluid added to the fluidic passages; and a circulating mechanism configured to circulate the dielectric fluid through the transistor plane.