The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Dec. 04, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ming-Da Cheng, Taoyuan, TW;
Tzy-Kuang Lee, Taichung, TW;
Hao Chun Liu, Hsinchu, TW;
Po-Hao Tsai, Zhongli, TW;
Chih-Hsien Lin, Tainan, TW;
Ching-Wen Hsiao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a patterned mask comprising a first opening, plating a conductive feature in the first opening, depositing a passivation layer on a sidewall and a top surface of the conductive feature, and patterning the passivation layer to form a second opening in the passivation layer. The passivation layer has sidewalls facing the second opening. A planarization layer is dispensed on the passivation layer. The planarization layer is patterned to form a third opening. After the planarization layer is patterned, a portion of the planarization layer is located in the second opening and covers the sidewalls of the passivation layer. An Under-Bump Metallurgy (UBM) is formed to extend into the third opening.