The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Jan. 31, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Sheng Chang, Hsinchu County, TW;
Chia-En Huang, Hsinchu County, TW;
Wan-Hsueh Cheng, New Taipei, TW;
Yao-Jen Yang, Hsinchu County, TW;
Yih Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A structure includes first and second active areas, first and second gates and a data line. The first gate is continuous and crosses over the first active area and the second active area. The first gate corresponds to gate terminals of first and second transistors, and first source/drain regions of the first and the second active areas correspond to first source/drain terminals of the first and second transistors. The second gate includes first and second gate portions electrically isolated from each other. The first and second gate portions correspond to gate terminals of third and fourth transistors, respectively. The first gate portion crosses over the first active area, and the second gate portion crosses over the second active area. The first data line is coupled to the first source/drain regions of the first active area and the second active area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile