The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Oct. 15, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Kangshu Zhan, Hefei, CN;
Qiang Wan, Hefei, CN;
Penghui Xu, Hefei, CN;
Tao Liu, Hefei, CN;
Sen Li, Hefei, CN;
Jun Xia, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present application provides a method for preparing a semiconductor structure and a semiconductor structure, relating to the technical field of semiconductors. The method for preparing a semiconductor structure includes: providing a base; forming a support layer having capacitor holes and electric contact structures; forming a first dielectric layer in the capacitor holes, the first dielectric layer surrounding first intermediate holes; forming a first electrode layer in the first intermediate holes, the first electrode layer filling the first intermediate holes; removing part of the support layer to form second intermediate holes; forming a second dielectric layer in the second intermediate holes, the first dielectric layer and the second dielectric layer forming a dielectric layer; and, forming a second electrode layer on the dielectric layer.