The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

May. 24, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming-Heng Tsai, Taipei, TW;

Chun-Sheng Liang, Puyan Township, TW;

Pei-Lin Wu, Kaohsiung, TW;

Yi-Ren Chen, Taoyuan, TW;

Shih-Hsun Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/823418 (2013.01); H01L 21/823425 (2013.01); H01L 29/0847 (2013.01); H01L 29/1608 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/42368 (2013.01); H01L 29/4966 (2013.01); H01L 29/7848 (2013.01); H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The semiconductor device structure includes a spacer over a side of the gate stack. The semiconductor device structure includes a dielectric layer over the substrate. The dielectric layer has a first recess, the dielectric layer has an upper portion and a first lower portion, the upper portion is over the first recess, the first recess is between the first lower portion and the spacer, and the upper portion has a convex curved sidewall.


Find Patent Forward Citations

Loading…