The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Sep. 16, 2021
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Yasutoshi Tsubota, Toyama, JP;

Masanori Nakayama, Toyama, JP;

Katsunori Funaki, Toyama, JP;

Tatsushi Ueda, Toyama, JP;

Eiko Takami, Toyama, JP;

Yuichiro Takeshima, Toyama, JP;

Hiroto Igawa, Toyama, JP;

Yuki Yamakado, Toyama, JP;

Keita Ichimura, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); H01L 21/02252 (2013.01); H01L 21/02323 (2013.01); H01L 21/3003 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.


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