The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
May. 23, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Yun Peng, Hsinchu, TW;
Keng-Chu Lin, Pingtung County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02142 (2013.01); H01L 21/02148 (2013.01); H01L 21/02178 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/022 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/308 (2013.01); H01L 21/76283 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/02145 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/76837 (2013.01); H01L 29/7843 (2013.01);
Abstract
A device includes a semiconductive substrate, a fin structure, and an isolation material. The fin structure extends from the semiconductive substrate. The isolation material is over the semiconductive substrate and adjacent to the fin structure, wherein the isolation material includes a first metal element, a second metal element, and oxide.