The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

May. 11, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jaspreet S. Gandhi, San Jose, CA (US);

Michel Koopmans, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76898 (2013.01); H01L 23/3677 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/06519 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/141 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/17519 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/10253 (2013.01);
Abstract

Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads that directly contact the adjacent silicon dies in the stack without the intervening layers of the low thermal conductivity materials (e.g., passivation materials). In some embodiments, the manufacturing yield of the stack can be improved by having generally coplanar top surfaces of the thermal pads and under-bump metallization (UBM) structures.


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