The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Jan. 05, 2022
Applicant:

SK Keyfoundry Inc., Cheongju-si, KR;

Inventor:

Seung Mo Jo, Cheongju-si, KR;

Assignee:

SK keyfoundry Inc., Cheongju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/35 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01G 4/35 (2013.01); H01L 23/642 (2013.01); H01L 28/60 (2013.01);
Abstract

A trench capacitor manufacturing method is provided. The method includes forming a deep trench in a wafer, forming a trench capacitor structure including a plurality of dielectric films and a plurality of conductive layers in the deep trench; determining if the wafer has a tensile stress based on the forming of the trench capacitor structure; performing a high temperature heat treatment to the trench capacitor structure to change a form of the wafer to a direction that offsets the tensile stress; forming an inter-layer insulating film on the trench capacitor structure; and forming a metal interconnect on the inter-layer insulating film.


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