The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Jul. 05, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jheng-Sheng You, Hsinchu County, TW;
Hsin-Chih Lin, Hsinchu, TW;
Kun-Ming Huang, Taipei, TW;
Lieh-Chuan Chen, Hsinchu, TW;
Po-Tao Chu, New Taipei, TW;
Shen-Ping Wang, Keelung, TW;
Chien-Li Kuo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a first III-V compound layer, a second III-V compound layer, source and drain structures, a gate structure, and a gate field plate. The second III-V compound layer is over the first III-V compound layer. The source and drain structures are over the second III-V compound layer and spaced apart from each other. The gate structure is over the second III-V compound layer and between the source and drain structures. The gate field plate is over the second III-V compound. From a top view the gate field plate forms a strip pattern interposing a stripe pattern of the gate structure and a stripe pattern of the drain structure.