The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Sep. 07, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/0206 (2013.01); H01L 21/02068 (2013.01); H01L 29/0607 (2013.01); H01L 29/42364 (2013.01);
Abstract
Embodiments relate to a method for fabricating a semiconductor structure, a semiconductor structure, and a peripheral circuit. The method for fabricating a semiconductor structure includes: providing a substrate; forming a gate initial structure and a residue on the substrate; and removing the residue by means of a first cleaning liquid. The first cleaning liquid is capable of inhibiting the residue from undergoing a hydrolysis reaction.