The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Jun. 30, 2022
Macronix International Co., Ltd., Hsinchu, TW;
Jeng Hwa Liao, Hsinchu, TW;
Zong-Jie Ko, Kaohsiung, TW;
Hsing-Ju Lin, New Taipei, TW;
Jung-Yu Shieh, Hsinchu, TW;
Ling-Wuu Yang, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A transistor structure including a substrate, a gate structure, first pocket doped regions, second pocket doped regions, and source/drain extension regions, and source/drain regions is provided. The gate structure is located on the substrate. The first pocket doped regions are located in the substrate aside the gate structure. A dopant of the first pocket doped region includes a group IVA element. The second pocket doped regions are located in the substrate aside the gate structure. A depth of the second pocket doped region is greater than a depth of the first pocket doped region. The source/drain extension regions are located in the first pocket doped regions. The source/drain regions are located in the substrate aside the gate structure. The source/drain extension region is located between the source/drain region and the gate structure.