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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12027525 B1

PDFFull Text
Date of Patent:
Jul. 02, 2024

Filed:

Jul. 28, 2020

Integrated circuit device, method, and system

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chien Yao Huang, Hsinchu, TW;

Wun-Jie Lin, Hsinchu, TW;

Kuo-Ji Chen, Wu-Ku, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Mounir S Amer

Assistant Examiner:

Alexander Belousov

Int. Cl.
CPC ...
H01L 27/11 (2006.01); G06F 30/392 (2020.01); H01L 21/265 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/118 (2006.01); G06F 117/02 (2020.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); G06F 30/392 (2020.01); H01L 21/26513 (2013.01); H01L 21/823807 (2013.01); H01L 21/823892 (2013.01); H01L 27/0207 (2013.01); G06F 2117/02 (2020.01); H01L 2027/1189 (2013.01);
Abstract

An integrated circuit (IC) device includes a plurality of TAP cells arranged at intervals in a first direction and a second direction transverse to the first direction. The plurality of TAP cells includes at least one first TAP cell. The first TAP cell includes two first end areas and a first middle area arranged consecutively in the second direction. The first middle area includes a first dopant of a first type implanted in a first well region of the first type. The first end areas are arranged on opposite sides of the first middle area in the second direction. Each of the first end areas includes a second dopant of a second type implanted in the first well region, the second type different from the first type.

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