The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

May. 06, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hao-Yi Tsai, Hsinchu, TW;

Tzuan-Horng Liu, Taoyuan, TW;

Chien-Ling Hwang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 21/68 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/56 (2013.01); H01L 23/31 (2013.01); H01L 23/49816 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 24/14 (2013.01);
Abstract

A semiconductor device includes an integrated circuit, first conductive features, second conductive features, a package structure, and an encapsulant. The integrated circuit has an active surface and a rear surface opposite to the active surface. The first conductive features surround the integrated circuit. The second conductive features are stacked on the first conductive features. The package structure is disposed on the second conductive features and the rear surface of the integrated circuit. The encapsulant laterally encapsulates the integrated circuit, the first conductive features, the second conductive features, and the package structure.


Find Patent Forward Citations

Loading…