The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
May. 21, 2021
Winbond Electronics Corp., Taichung, TW;
Tseng-Yao Pan, Taichung, TW;
Chien-Hsiang Yu, Taichung, TW;
Hung-Sheng Chen, Taichung, TW;
Ching-Yung Wang, Taichung, TW;
Cheng-Hong Wei, Taichung, TW;
WINBOND ELECTRONICS CORP., Taichung, TW;
Abstract
A method for forming a semiconductor structure includes: forming an active layer on a substrate; forming hard masks on the active layer, wherein a first spacing is disposed between two closely spaced hard masks in a predetermined word line region nearest to a predetermined selective gate region, wherein the first spacing is less than a second spacing between any two of the hard masks other than the two closely spaced hard masks; forming spacers on the sidewalls of the hard masks, wherein two spacers on opposite sides of the sidewalls of the closely spaced hard masks merge into a combined spacer; and transferring the patterns of the spacers to the active layer to form word lines. The step of transferring the patterns of the spacers includes transferring the pattern of the combined spacer to the active layer to form a first word line.