The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Sep. 16, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Chanro Park, Clifton Park, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Kenneth Chun Kuen Cheng, Shatin, CN;
Chih-Chao Yang, Glenmont, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); H01L 21/76816 (2013.01); H01L 21/76841 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01);
Abstract
An etch stop layer is located on top of a first dielectric layer. A conductive line is located on top of the etch stop layer. A second dielectric layer is located above the first dielectric layer. The second dialect layer is in contact with the first dielectric layer.