The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Feb. 11, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Daniel Peter, Sunnyvale, CA (US);
Da Li, Newark, CA (US);
Jengyi Yu, San Ramon, CA (US);
Alexander Kabansky, Santa Clara, CA (US);
Katie Nardi, San Jose, CA (US);
Samantha SiamHwa Tan, Fremont, CA (US);
Younghee Lee, Pleasanton, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31111 (2013.01);
Abstract
A method for selectively etching a silicon oxide region with respect to a lower oxygen silicon containing region is provided. A sacrificial mask selectively deposited on the lower oxygen silicon containing region with respect to the silicon oxide region. An atomic layer etch selectively etches the silicon oxide region with respect to the sacrificial mask on the lower oxygen silicon containing region.