The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Feb. 18, 2022
Micron Technology, Inc., Boise, ID (US);
Ryan G. Fisher, Boise, ID (US);
Arvin Daniel A. Daguro, Boise, ID (US);
Daniel R. Loughmiller, Boise, ID (US);
Noel Marquez, Boise, ID (US);
Reshmi Basu, Boise, ID (US);
Kenneth Koenig, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method includes performing a first operation to program data to a group of memory cells of a memory device, wherein the data comprises host data and a bit pattern indicative of a first temperature of the group of memory cells and receiving a signal to perform a second operation to read the host data from the group of memory cells. The method further includes determining, responsive to receipt of the signal, whether a second temperature of the group of memory cells is outside a threshold temperature differential that is based on the bit pattern indicative of the first temperature of the group of memory cells, applying a voltage offset signal to the group of memory cells responsive to a determination that the second temperature of the group of memory cells is outside the threshold temperature differential, and performing the second operation to read the host data from the group of memory cells subsequent to application of the voltage offset signal to the group of memory cells.