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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12021083 B1

PDFFull Text
Date of Patent:
Jun. 25, 2024

Filed:

Jan. 02, 2023

Fin field-effect transistor and method of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Te-Hsin Chiu, Miaoli County, TW;

Kam-Tou Sio, Zhubei, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

FOLEY & LARDNER LLP

Primary Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/764 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/764 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 23/5286 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate. The semiconductor device includes a first fin protruding from the semiconductor substrate and extending along a first direction. The semiconductor device includes a second fin protruding from the semiconductor substrate and extending along the first direction. A first epitaxial source/drain region coupled to the first fin and a second epitaxial source/drain region coupled to the second fin are laterally spaced apart from each other by an air void.

Find Patent Forward Citations

Chiu, Te-Hsin. (2024). Fin field-effect transistor and method of forming the same (U.S. Patent No. 12021083). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12021083

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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