The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

May. 16, 2023
Applicant:

D2s, Inc., San Jose, CA (US);

Inventors:

Akira Fujimura, Saratoga, CA (US);

P. Jeffrey Ungar, Belmont, CA (US);

Nagesh Shirali, San Jose, CA (US);

Assignee:

D2S, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/30 (2020.01); G03F 1/36 (2012.01); G03F 1/70 (2012.01); G03F 1/74 (2012.01); G03F 1/78 (2012.01); G03F 7/00 (2006.01); G06F 30/398 (2020.01); G06F 119/18 (2020.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G03F 1/36 (2013.01); G03F 1/70 (2013.01); G03F 1/74 (2013.01); G03F 1/78 (2013.01); G03F 7/70441 (2013.01); G03F 7/705 (2013.01); G06F 2119/18 (2020.01);
Abstract

Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include determining an initial mask pattern from a desired pattern for a substrate; calculating a first substrate pattern from the initial mask pattern; determining an initial set of VSB shots that will form the initial mask pattern; calculating a simulated mask pattern from the initial set of VSB shots; calculating a second substrate pattern from the simulated mask pattern; and adjusting the initial set of VSB shots, wherein the adjusting of the initial set of VSB shots creates an adjusted set of VSB shots.


Find Patent Forward Citations

Loading…