The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Aug. 25, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Heng Wu, Guilderland, NY (US);

Alexander Reznicek, Troy, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/80 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01);
U.S. Cl.
CPC ...
H10N 52/80 (2023.02); G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H10B 61/20 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02); G11C 11/1673 (2013.01); H10N 50/85 (2023.02);
Abstract

Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a spin transfer torque (STT) magnetoresistive random access memory (MRAM) stack. The semiconductor structure may also include a spin orbit torque (SOT) MRAM stack vertically in series with the STT-MRAM. The SOT-MRAM stack may include a heavy metal spin hall effect rail configured to flip an SOT free-layer magnetic orientation in response to a horizontal signal through the heavy metal rail.


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