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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12015026 B1

PDFFull Text
Date of Patent:
Jun. 18, 2024

Filed:

Sep. 13, 2021

Methods of forming circuit-protection devices

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Michael A. Smith, Boise, ID (US);

Kenneth W. Marr, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

Thanh T Nguyen

Int. Cl.
CPC ...
H01L 27/02 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/22 (2006.01); G11C 16/26 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H10B 41/40 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); G11C 16/22 (2013.01); H01L 21/28035 (2013.01); H01L 21/28158 (2013.01); H01L 21/3212 (2013.01); H01L 21/823456 (2013.01); H01L 21/823462 (2013.01); H01L 21/823475 (2013.01); H01L 29/0649 (2013.01); H10B 41/40 (2023.02); H10B 43/40 (2023.02); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 21/31116 (2013.01); H01L 21/32137 (2013.01);
Abstract

Methods of forming a circuit-protection device include forming a dielectric having a first thickness and a second thickness greater than the first thickness over a semiconductor, forming a conductor over the dielectric, and patterning the conductor to retain a portion of the conductor over a portion of the dielectric having the second thickness, and to retain substantially no portion of the conductor over a portion of the dielectric having the first thickness, wherein the retained portion of the conductor defines a control gate of a field-effect transistor of the circuit-protection device.

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