The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Oct. 11, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Rajesh Prasad, Gloucester, MA (US);

Sarah Bobek, Sunnyvale, CA (US);

Prashant Kumar Kulshreshtha, San Jose, CA (US);

Kwangduk Douglas Lee, Redwood City, CA (US);

Harry Whitesell, Sunnyvale, CA (US);

Hidetaka Oshio, Tokyo, JP;

Dong Hyung Lee, Danville, CA (US);

Deven Matthew Raj Mittal, Middleton, MA (US);

Scott Falk, Essex, MA (US);

Venkataramana R. Chavva, Andover, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); C23C 16/26 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); C23C 16/26 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01L 21/02321 (2013.01); H01L 21/0234 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/31122 (2013.01); H01L 21/31155 (2013.01);
Abstract

Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.


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