The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Jun. 16, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Li-Te Chang, San Jose, CA (US);

Murong Lang, San Jose, CA (US);

Zhenming Zhou, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/10 (2016.01); G06F 12/06 (2006.01); G06F 12/1027 (2016.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 12/1027 (2013.01); G06F 12/0692 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G06F 2212/68 (2013.01); G11C 16/0483 (2013.01);
Abstract

A read command is received by a processing device coupled to a memory device. The read command specified a logical address. The processing device translates the logical address into a physical address of a physical block of the memory device, wherein the physical address specifies a wordline and a memory device die. Responsive to determining that the physical block is partially programmed, the processing device identifies a threshold voltage offset associated with the wordline. The processing device computes a modified threshold voltage by applying the threshold voltage offset to a read level associated with the memory device die. The processing device reads the data from the physical block using the modified threshold voltage.


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