The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Apr. 09, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 23/532 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/7685 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 29/165 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An integrated circuit structure includes a first Inter-Layer Dielectric (ILD), a gate stack in the first ILD, a second ILD over the first ILD, a contact plug in the second ILD, and a dielectric protection layer on opposite sides of, and in contact with, the contact plug. The contact plug and the dielectric protection layer are in the second ILD. A dielectric capping layer is over and in contact with the contact plug.