The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Nov. 16, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Zhi-Chang Lin, Hsinchu County, TW;

Teng-Chun Tsai, Hsinchu, TW;

Wei-Hao Wu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76835 (2013.01); H01L 21/0228 (2013.01); H01L 21/02304 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76837 (2013.01); H01L 21/76877 (2013.01); H01L 21/823475 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/4232 (2013.01);
Abstract

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate; a first conductive feature and a second conductive feature disposed on the semiconductor substrate; and a staggered dielectric feature interposed between the first and second conductive feature. The staggered dielectric feature includes first dielectric layers and second dielectric layers being interdigitated. The first dielectric layers include a first dielectric material and the second dielectric layers include a second dielectric material being different from the first dielectric material.


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