The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Mar. 04, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tsuyoshi Takahashi, Nirasaki, JP;

Yu Nunoshige, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/34 (2013.01); C23C 16/4554 (2013.01); C23C 16/505 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 2237/338 (2013.01);
Abstract

Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.


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