The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Feb. 22, 2023
National University Corporation Nagoya University, Nagoya, JP;
Toyoda Gosei Co., Ltd, Kiyosu, JP;
Shugo Nitta, Nagoya, JP;
Yoshio Honda, Nagoya, JP;
Kentaro Nagamatsu, Nagoya, JP;
Hiroshi Amano, Nagoya, JP;
Naoki Fujimoto, Nagoya, JP;
National University Corporation Nagoya University, Nagoya, JP;
TOYODA GOSEI CO., LTD, Kiyosu, JP;
Abstract
A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.